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APTM10DDAM19T3G
Dual Boost chopper MOSFET Power Module
13 14
VDSS = 100V RDSon = 19m typ @ Tj = 25C ID = 70A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Power MOS V(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance Symmetrical design * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Each leg can be easily paralleled to achieve a single boost of twice the current capability * RoHS Compliant
CR1 22 7
CR2
23 Q1 26
8 Q2 4
27 29 15 30 31 R1 32 16
3
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
Tc = 25C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTM10DDAM19T3G- Rev 1
Max ratings 100 70 50 300 30 21 208 75 30 1500
Unit V A V m W A
July, 2006
APTM10DDAM19T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Test Conditions Min Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current
VGS = 0V,VDS = 100V VGS = 0V,VDS = 80V
Typ
Tj = 25C Tj = 125C 19 2
VGS = 10V, ID = 35A VGS = VDS, ID = 1mA VGS = 30 V, VDS = 0V
Max 250 1000 21 4 100
Unit A m V nA
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 100V ID = 70A Inductive switching @ 125C VGS = 15V VBus = 66V ID = 70A R G = 5 Inductive switching @ 25C VGS = 15V, VBus = 66V ID = 70A, R G = 5 Inductive switching @ 125C VGS = 15V, VBus = 66V ID = 70A, R G = 5
Min
Typ 5100 1900 800 200 40 92 35 70 95 125 276 302 304 320
Max
Unit pF
nC
ns
J J
Chopper diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt =200A/s
Min 200
Typ
Max 250 500
Unit V A A V ns nC
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
VR=200V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
60 1.1 1.4 0.9 31 60 60 250
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July, 2006
APTM10DDAM19T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Transistor diode 2500 -40 -40 -40 2.5 Min Typ Max 0.6 0.9 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTM10DDAM19T3G- Rev 1
July, 2006
17
28
APTM10DDAM19T3G
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9 0.7
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 125 I D, Drain Current (A)
VGS=15V, 10V & 9V 8V
300 ID, Drain Current (A) 250 200 150
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
100 75 50
T J=-55C T J=25C T J=125C
7V
100 50 0 0 4 8 12 16 20 24
6V
25 0
T J=125C
T J=-55C
28
0
VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.6 ID, DC Drain Current (A)
Normalized to V GS=10V @ 35A
1 2 3 4 5 6 7 VGS , Gate to Source Voltage (V)
8
DC Drain Current vs Case Temperature 70 60 50 40 30 20 10 0 25 50 75 100 125 150
July, 2006 4-6 APTM10DDAM19T3G- Rev 1
RDS(on) Drain to Source ON Resistance
1.4
VGS=10V
1.2 1 0.8 0 50 100 150 200 250 ID, Drain Current (A)
VGS=20V
TC, Case Temperature (C)
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APTM10DDAM19T3G
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area 1000
limited by RDSon
VGS=10V ID= 35A
1ms
100
10ms
10
Single pulse TJ=150C TC=25C 1
100ms
1 10 100 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 240 280
July, 2006
ID=70A T J=25C VDS=20V VDS=50V V DS =80V
10000
Ciss Coss
1000
Crss
100 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
Gate Charge (nC)
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APTM10DDAM19T3G- Rev 1
APTM10DDAM19T3G
Delay Times vs Current 120 100 t d(on) and td(off) (ns) 80 60 40 20 0 0 20 40 60 80 100 I D, Drain Current (A) 120
VDS=66V RG=5 T J=125C L=100H
Rise and Fall times vs Current 160 140 t r and tf (ns) 120 100 80 60 40 20 0 0 20 40 60 80 100 ID, Drain Current (A) 120
V DS=66V R G=5 T J=125C L=100H
t d(off)
tf
tr
td(on)
Switching Energy vs Current 0.75 Eoff Switching Energy (mJ)
V DS =66V RG =5 T J=125C L=100H
Switching Energy vs Gate Resistance 1.5
VDS=66V ID=70A TJ=125C L=100H
Eon and Eoff (mJ)
0.5
1
Eoff
Eon 0.25 Eon
0.5
Eon
0 0 20 40 60 80 100 120 I D, Drain Current (A) Operating Frequency vs Drain Current
VDS=66V D=50% RG=5 TJ=125C TC=75C
0 0 10 20 30 40 50 60 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 1000
300 250 Frequency (kHz) 200 150 100 50 0 13 25 38 50 63 75 I D, Drain Current (A)
Hard switching ZCS
100
TJ=150C
TJ=25C
ZVS
10
1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
July, 2006
VSD, Source to Drain Voltage (V)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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